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DT451N

Features: High Cell DensityDMOSTechnologyLow On-State ResistanceHigh Power and Current CapabilityFast Switching SpeedHigh Transient TolerancePinoutSpecifications Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current Note...

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SeekIC No. : 004329897 Detail

DT451N: Features: High Cell DensityDMOSTechnologyLow On-State ResistanceHigh Power and Current CapabilityFast Switching SpeedHigh Transient TolerancePinoutSpecifications Characteristic Symbol Value ...

DT451N Data Sheet

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Part Number:
DT451N
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

High Cell DensityDMOSTechnology
Low On-State Resistance
High Power and Current Capability
Fast Switching Speed
High Transient Tolerance


Pinout

Connection Diagram


Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Drain Current Note 1a Continuous
                                           Pulsed		 ID ±5.5
±25		 A
Maximum Power Dissipation Note 1a
                                             Note 1b
                                             Note 1c		 Pd 3.0
1.3
1.1		 W
Operating and Storage Temperature Range Tj,TSTG -65 to +150 °C



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