Features: ·N-Channel Enhancement Mode Device·DMOS Structure·Lower Capacitances for Broadband Operation·High Saturated Output Power·Lower Noise Figure Than Competitive DevicesSpecifications Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 ...
DU2880V: Features: ·N-Channel Enhancement Mode Device·DMOS Structure·Lower Capacitances for Broadband Operation·High Saturated Output Power·Lower Noise Figure Than Competitive DevicesSpecifications Para...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Parameter | Symbol | Rating | Units |
| Drain-Source Voltage | VDS | 65 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Drain-Source Current | IDS | 8 | A |
| Power Dissipation |
PD | 206 | W |
| JunctionTemperature | TJ | 200 | |
| StorageTemperature | Tstg | -55 to +150 | |
| Thermal Resistance | JC | 0.65 | /W |