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EFA120D-SOT89

Features: ` LOW COST SURFACE-MOUNT PLASTIC PACKAGE` +28.0dBm TYPICAL OUTPUT POWER` 14.0dB TYPICAL POWER GAIN AT 2GHz` 0.7dB TYPICAL NOISE FIGURE AT 2GHz` +42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz` 0.5 X 2400 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPITAXIAL DOPIN...

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SeekIC No. : 004334442 Detail

EFA120D-SOT89: Features: ` LOW COST SURFACE-MOUNT PLASTIC PACKAGE` +28.0dBm TYPICAL OUTPUT POWER` 14.0dB TYPICAL POWER GAIN AT 2GHz` 0.7dB TYPICAL NOISE FIGURE AT 2GHz` +42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT PO...

EFA120D-SOT89 Data Sheet

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Part Number:
EFA120D-SOT89
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

`  LOW COST SURFACE-MOUNT PLASTIC PACKAGE
`  +28.0dBm TYPICAL OUTPUT POWER
`  14.0dB TYPICAL POWER GAIN AT 2GHz
`  0.7dB TYPICAL NOISE FIGURE AT 2GHz
`  +42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz
`  0.5 X 2400 MICRON RECESSED "MUSHROOM" GATE
`  Si3N4 PASSIVATION
`  ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY


Application

·  Analog and Digital Wireless System
·  HPA


Specifications

SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
30mA
26dBm
175oC
-65/175oC
3.2 W
7V
-4V
390mA
5mA
@ 3dB Compression
150oC
-65/150oC
2.7 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
          2. Exceeding any of the above ratings may reduce MTTF below design goals.

 

 




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