EFC120B-100F

Features: ` HERMETIC 100mil CERAMIC FLANGE PACKAGE` +28.0dBm TYPICAL OUTPUT POWER` HIGH BVgd FOR 10V BIAS` 9.0dB TYPICAL POWER GAIN AT 8GHz` 0.3 X 1200 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITYSpe...

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EFC120B-100F Picture
SeekIC No. : 004334447 Detail

EFC120B-100F: Features: ` HERMETIC 100mil CERAMIC FLANGE PACKAGE` +28.0dBm TYPICAL OUTPUT POWER` HIGH BVgd FOR 10V BIAS` 9.0dB TYPICAL POWER GAIN AT 8GHz` 0.3 X 1200 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVA...

floor Price/Ceiling Price

Part Number:
EFC120B-100F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/27

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Product Details

Description



Features:

`  HERMETIC 100mil CERAMIC FLANGE PACKAGE
`  +28.0dBm TYPICAL OUTPUT POWER
`  HIGH BVgd FOR 10V BIAS
`  9.0dB TYPICAL POWER GAIN AT 8GHz
`  0.3 X 1200 MICRON RECESSED "MUSHROOM" GATE
`  Si3N4 PASSIVATION
`  ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY



Specifications




SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
14V
-8V
Idss
30mA
26dBm
175oC
-65/175oC
3.2W
10V
-4.5V
270mA
5mA
@ 3dB Compression
150oC
-65/150oC
2.7W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
          2. Exceeding any of the above ratings may reduce MTTF below design goals.



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