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EM128L08

Features: • Wide Voltage Range: 2.3 to 3.6 Volts• Extended Temperature Range: -40 to +85 oC• Fast Cycle Time: TACC < 55 ns @ 3.0V• Very Low Operating Current: ICC < 10 mA typical at 3V, 10 Mhz• Very Low Standby Current: ISB < 10 mA @ 55 oC• 32-Pin TSOP,...

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SeekIC No. : 004335862 Detail

EM128L08: Features: • Wide Voltage Range: 2.3 to 3.6 Volts• Extended Temperature Range: -40 to +85 oC• Fast Cycle Time: TACC < 55 ns @ 3.0V• Very Low Operating Current: ICC < 10 ...

EM128L08 Data Sheet

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Part Number:
EM128L08
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

• Wide Voltage Range: 2.3 to 3.6 Volts
• Extended Temperature Range: -40 to +85 oC
• Fast Cycle Time: TACC < 55 ns @ 3.0V
• Very Low Operating Current: ICC < 10 mA typical at 3V, 10 Mhz
• Very Low Standby Current: ISB < 10 mA @ 55 oC
• 32-Pin TSOP, STSOP, Packages Available


Pinout

Connection Diagram


Specifications

Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
0.3 to 4.0
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
40 to +125
Operating Temperature
TA
-20 to +80
Soldering Temperature and Time
TSOLDER
260, 10sec(Lead only)



Description

The EM128L08 is an integrated memory device containing a low power 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is fabricated using NanoAmp's advanced CMOS process and high-speed/lowpower circuit technology. This device is designed for very low voltage operation making it quite suitable for battery powered devices. EM128L08 is also designed for both very low operating and standbycurrents. The device pinout is compatible with other standard 128Kx8 SRAMs.




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