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Part Number: EM128L08

 

 

 

 

Description: The EM128L08 is an integrated memory device containing a low power 1 Mbit Static Random Access Memory ...


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EM128L08 General Description


The EM128L08 is an integrated memory device containing a low power 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is fabricated using NanoAmp's advanced CMOS process and high-speed/lowpower circuit technology. This device is designed for very low voltage operation making it quite suitable for battery powered devices. It is also designed for both very low operating and standbycurrents. The device pinout is compatible with other standard 128Kx8 SRAMs.

EM128L08 Maximum Ratings

Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
0.3 to 4.0
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
40 to +125
Operating Temperature
TA
-20 to +80
Soldering Temperature and Time
TSOLDER
260, 10sec(Lead only)

EM128L08 Features

• Wide Voltage Range: 2.3 to 3.6 Volts
• Extended Temperature Range: -40 to +85 oC
• Fast Cycle Time: TACC < 55 ns @ 3.0V
• Very Low Operating Current: ICC < 10 mA typical at 3V, 10 Mhz
• Very Low Standby Current: ISB < 10 mA @ 55 oC
• 32-Pin TSOP, STSOP, Packages Available

EM128L08 Connection Diagram

EM128L08  Connection Diagram

EM128L08 datasheet

EM128L08
PDF/DataSheet Download

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