Purchase EM48BM1684LBA, In-stock EM48BM1684LBA From SeekIC.
Part Number: EM48BM1684LBA
Description: The EM48BM1684LBA is Synchronous Dynamic Random Access Memory (SDRAM) organized as 8Meg words x 4 bank...
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EM48BM1684LBA
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DataSheet
General Description
EM48BM1684LBA General Description
The EM48BM1684LBA is Synchronous Dynamic Random Access Memory (SDRAM) organized as 8Meg words x 4 banks by 16 bits. All inputs and outputs are synchronized with the positive edge of the clock.
The 512Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is esigned to operate at 1.8V low power memory system. It also provides auto refresh with power saving / down ode. All inputs and outputs voltage levels are compatible with LVCMOS.
Available packages:
FBGA 54B 12.5mm x 10mm x 1.2mm.
EM48BM1684LBA Maximum Ratings
| Symbol | Item | Rating | Units | |
| VIN, VOUT | Input, Output Voltage | -0.3 ~ +2.3 | V | |
| VDD, VDDQ | Power Supply Voltage | -0.3 ~ +2.3 | V | |
| TOP | Operating Temperature Range | Commercial | 0 ~ +70 | |
| Extended | -25 ~ +85 | |||
| TSTG | Storage Temperature Range | -55 ~ +125 | ||
| PD | Power Dissipation | 1 | W | |
| IOS | Short Circuit Current | 50 | mA | |
Note: Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
EM48BM1684LBA Features
• Fully Synchronous to Positive Clock Edge
• VDD/VDDQ= 1.8V +/- 0.15V Power Supply
• LVCMOS Compatible with Multiplexed Address
• Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page
• Programmable CAS Latency (C/L) - 2 or 3
• Data Mask (DQM) for Read / Write Masking
• Programmable Wrap Sequence
Sequential (B/L = 1/2/4/8/full Page)
Interleave (B/L = 1/2/4/8)
• Burst Read with Single-bit Write Operation
• All Inputs are Sampled at the Rising Edge of the System Clock
• Auto Refresh and Self Refresh
• 8,192 Refresh Cycles / 64ms (7.8us)
• Partial Array Self-Refresh (PASR)
• Auto Temperature Compensated Self-Refresh(TCSR) by built-in temperature sensor
• Driver strength: normal/weak
• VDD/VDDQ= 1.8V +/- 0.15V Power Supply
• LVCMOS Compatible with Multiplexed Address
• Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page
• Programmable CAS Latency (C/L) - 2 or 3
• Data Mask (DQM) for Read / Write Masking
• Programmable Wrap Sequence
Sequential (B/L = 1/2/4/8/full Page)
Interleave (B/L = 1/2/4/8)
• Burst Read with Single-bit Write Operation
• All Inputs are Sampled at the Rising Edge of the System Clock
• Auto Refresh and Self Refresh
• 8,192 Refresh Cycles / 64ms (7.8us)
• Partial Array Self-Refresh (PASR)
• Auto Temperature Compensated Self-Refresh(TCSR) by built-in temperature sensor
• Driver strength: normal/weak
EM4000XS
PDF/DataSheet Download
- Datasheet: EM4000XS
- File Size: 402302 KB
- Manufacturer: EPCOS
- Click here to Download
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