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EM48BM1684LBA

Features: • Fully Synchronous to Positive Clock Edge• VDD/VDDQ= 1.8V +/- 0.15V Power Supply• LVCMOS Compatible with Multiplexed Address• Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page• Programmable CAS Latency (C/L) - 2 or 3• Data Mask (DQM) for Read ...

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SeekIC No. : 004335935 Detail

EM48BM1684LBA: Features: • Fully Synchronous to Positive Clock Edge• VDD/VDDQ= 1.8V +/- 0.15V Power Supply• LVCMOS Compatible with Multiplexed Address• Programmable Burst Length (B/L) - 1, ...

EM48BM1684LBA Data Sheet

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Part Number:
EM48BM1684LBA
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Fully Synchronous to Positive Clock Edge
• VDD/VDDQ= 1.8V +/- 0.15V Power Supply
• LVCMOS Compatible with Multiplexed Address
• Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page
• Programmable CAS Latency (C/L) - 2 or 3
• Data Mask (DQM) for Read / Write Masking
• Programmable Wrap Sequence
Sequential (B/L = 1/2/4/8/full Page)
Interleave (B/L = 1/2/4/8)
• Burst Read with Single-bit Write Operation
• All Inputs are Sampled at the Rising Edge of the System Clock
• Auto Refresh and Self Refresh
• 8,192 Refresh Cycles / 64ms (7.8us)
• Partial Array Self-Refresh (PASR)
• Auto Temperature Compensated Self-Refresh(TCSR) by built-in temperature sensor
• Driver strength: normal/weak




Specifications

Symbol Item Rating Units
VIN, VOUT Input, Output Voltage -0.3 ~ +2.3 V
VDD, VDDQ Power Supply Voltage -0.3 ~ +2.3 V
TOP Operating Temperature Range Commercial 0 ~ +70
Extended -25 ~ +85
TSTG Storage Temperature Range -55 ~ +125
PD Power Dissipation 1 W
IOS Short Circuit Current 50 mA

Note: Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.






Description

The EM48BM1684LBA is Synchronous Dynamic Random Access Memory (SDRAM) organized as 8Meg words x 4 banks by 16 bits. All inputs and outputs are synchronized with the positive edge of the clock.

The 512Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is esigned to operate at 1.8V low power memory system. It also provides auto refresh with power saving / down ode. All inputs and outputs voltage levels are compatible with LVCMOS.

Available packages:
FBGA 54B 12.5mm x 10mm x 1.2mm.






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