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EM512D16

Features: • Dual Voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.7 to 2.2 Volts• Extended Temperature Range: -40 to +85 oC• Fast Cycle Time: Random Access < 70 ns Page Mode < 25 ns• Very Low Operating Current: ICC < 5 mA typical at 2V, 10 Mhz•...

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SeekIC No. : 004335938 Detail

EM512D16: Features: • Dual Voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.7 to 2.2 Volts• Extended Temperature Range: -40 to +85 oC• Fast Cycle Time: Random Access < 70 ...

EM512D16 Data Sheet

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Part Number:
EM512D16
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Dual Voltage for Optimum Performance:
   Vccq - 2.3 to 3.6 Volts
   Vcc - 1.7 to 2.2 Volts
• Extended Temperature Range:
   -40 to +85 oC
• Fast Cycle Time:
   Random Access < 70 ns
   Page Mode < 25 ns
• Very Low Operating Current:
   ICC < 5 mA typical at 2V, 10 Mhz
• Very Low Standby Current:
   ISB < 2 uA @ 55 oC
• 16 Word Fast Page-Mode Operation
• 48-Pin BGA or Known Good Die available


Specifications

Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
0.3 to 3.0
V
Storage Temperature
TSTG
40 to 125
Operating Temperature
TA
-40 to +85



Description

The EM512D16 is an integrated memory device containing a low power 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The base design is the same as NanoAmp's standard low voltage version, EM512W16. The device is fabricated using NanoAmp's advanced CMOS process and high-speed/ultra low-power/ low-voltage circuit technology. The EM512D16 device pinout is compatible with other standard 512K x 16 SRAMs. The device is designed such that a creative user can improve system power and performance parameters through use of it's unique page mode operation.




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