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Part Number: EM512D16
Description: The EM512D16 is an integrated memory device containing a low power 8 Mbit Static Random Access Memory ...
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EM512D16
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DataSheet
General Description
EM512D16 General Description
The EM512D16 is an integrated memory device containing a low power 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The base design is the same as NanoAmp's standard low voltage version, EM512W16. The device is fabricated using NanoAmp's advanced CMOS process and high-speed/ultra low-power/ low-voltage circuit technology. The device pinout is compatible with other standard 512K x 16 SRAMs. The device is designed such that a creative user can improve system power and performance parameters through use of it's unique page mode operation.
EM512D16 Maximum Ratings
Item |
Symbol |
Rating |
Unit |
| Voltage on any pin relative to VSS | VIN,OUT |
0.3 to VCC+0.3 |
V |
| Voltage on VCC Supply Relative to VSS | VCC |
0.3 to 3.0 |
V |
| Storage Temperature | TSTG |
40 to 125 |
|
| Operating Temperature | TA |
-40 to +85 |
EM512D16 Features
• Dual Voltage for Optimum Performance:
Vccq - 2.3 to 3.6 Volts
Vcc - 1.7 to 2.2 Volts
• Extended Temperature Range:
-40 to +85 oC
• Fast Cycle Time:
Random Access < 70 ns
Page Mode < 25 ns
• Very Low Operating Current:
ICC < 5 mA typical at 2V, 10 Mhz
• Very Low Standby Current:
ISB < 2 uA @ 55 oC
• 16 Word Fast Page-Mode Operation
• 48-Pin BGA or Known Good Die available
Vccq - 2.3 to 3.6 Volts
Vcc - 1.7 to 2.2 Volts
• Extended Temperature Range:
-40 to +85 oC
• Fast Cycle Time:
Random Access < 70 ns
Page Mode < 25 ns
• Very Low Operating Current:
ICC < 5 mA typical at 2V, 10 Mhz
• Very Low Standby Current:
ISB < 2 uA @ 55 oC
• 16 Word Fast Page-Mode Operation
• 48-Pin BGA or Known Good Die available
EM512D16
PDF/DataSheet Download
- Datasheet: EM512D16
- File Size: 56237 KB
- Manufacturer: ETC [ETC]
- Click here to Download
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