Features: • Organized as 1M words by 16 bits• Fast Cycle Time : 60/65/70/85ns• Fast Page Cycle Time : 18/20/25/30ns• Page Read Operation by 8 words• Standby Current(ISB1): 100uA• Deep power-down Current : 10uA (Memory cell data invalid)• Byte data control:...
EM566169BC: Features: • Organized as 1M words by 16 bits• Fast Cycle Time : 60/65/70/85ns• Fast Page Cycle Time : 18/20/25/30ns• Page Read Operation by 8 words• Standby Current(ISB...
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Supply voltage, VCC | -0.2 to +3.6V |
Input voltages, VIN | -0.2 to VCC + 0.3V |
Input and output voltages, VIN, VOUT | -2.0 to +3.6V* |
Output short circuit current ISH | 100 mA |
Operating temperature, TA | -25 to +85°C |
Storage temperature, TSTRG | -65 to +125°C |
Soldering Temperature (10s), TSOLDER | 240°C |
Power dissipation, PD | 1 W |
The EM566169 is a 16M-bit Pseudo SRAM organized as 1M words by 16 bits. It is designed with advanced MOS technology specified RAM featuring low power static RAM compatible function and pin configuration. his device operates from a single power supply. Advanced circuit technology provides both high speed and ow power. It is automatically placed in low-power mode when CE1# or both UB# and LB# are asserted high or E2 is asserted low. There are three control inputs. CE1# and CE2 are used to select the device, and output enable (OE#) provides fast memory access. Data byte control pins (LB#,UB#) provide lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed wide operating range, the EM566169 can be used in environments exhibiting extreme temperature conditions.