Features: ` Fast access time: 45/55/70ns` Low power consumption: Operating current: 40/30/20mA (TYP.) Standby current: -L/-LL version 20/2A (TYP.)` Single 2.7V ~ 3.6V power supply` All inputs and outputs TTL compatible` Fully static operation` Tri-state output` Data retention voltage: 1.5V ...
EM6112K800V: Features: ` Fast access time: 45/55/70ns` Low power consumption: Operating current: 40/30/20mA (TYP.) Standby current: -L/-LL version 20/2A (TYP.)` Single 2.7V ~ 3.6V power supply` All inputs an...
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Description* COG (chip on glass) module using new >EM6124 LCD driver* 2 x 16 characters + icons* T...
PARAMETER | SYMBOL | RATING | UNIT |
Terminal Voltage with Respect to Vss | VTERM | -0.5 to 4.6 | V |
Operating Temperature | TA | 0 to 70(C grade) | °C |
-20 to 80(E grade) | |||
-40 to 85(I grade) | |||
Storage Temperature | TSTG | -65 to 150 | °C |
Power Dissipation PD |
PD | 1 | W |
DC Output Current | IOUT | 50 | mA |
Soldering Temperature (under 10 sec) | TSOLDER | 260 | °C |
The EM6112K800V is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.
The EM6112K800V is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application.
The EM6112K800V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible