Features: ` Single 3.3 ± 0.3V power supply` Fast clock rate - PC133: 133 MHz (CL3) - PC100: 100 MHz (CL2)` Fully synchronous operation referenced to clock rising edge` 4-bank operation controlled by BA0, BA1 (Bank Address)` Programmable Mode registers - /CAS Latency: 2 or 3 - Burst Length: 1, 2, 4...
EM639165: Features: ` Single 3.3 ± 0.3V power supply` Fast clock rate - PC133: 133 MHz (CL3) - PC100: 100 MHz (CL2)` Fully synchronous operation referenced to clock rising edge` 4-bank operation controlled by...
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Symbol |
Item |
Condition |
Rating |
Unit |
VDD |
Supply Voltage | with respect to VSS |
-0.5 - 4.6 |
V |
VDDQ |
Supply Voltage for Output | with respect to VSSQ |
-0.5 - 4.6 | V |
VI |
Input Voltage | with respect to VSS |
-0.5 - 4.6 |
V |
VO |
Output Voltage | with respect to VSSQ |
-0.5 - 4.6 |
V |
IO |
Output Current | 50 |
mA |
|
PD |
Power Dissipation | Ta = 25°C |
1000 |
mW |
| Topr | Operating Temperature | 0-70 |
°C |
|
Tstg |
Storage Temperature | -65-150 |
°C |
EM639165 is a high-speed Synchronous Dynamic Random Access Memory (SDRAM), organized as 4 banks x 2,097,152 words x 16 bits. All inputs and outputs are referenced to the rising edge of CLK.
EM639165 achieves very high-speed data rates up to 133MHz, and is suitable for main memories or graphic memories in computer systems. For handheld device application, we also provide a low power option, with self-refresh current under 800 A.