EMP50P12B

Features:

• NPT IGBTs 50A, 1200V
• 10us Short Circuit capability
* Square RBSOA
* Low Vce(on) (2.15Vtyp @ 50A, 25°C)
* Positive Vce(on) temperature coefficient
• Gen III HexFred Technology
* Low diode VF (1.78Vtyp @ 50A, 25°C)
* Soft reverse recovery
• 2m sensing resistors on all phase outputs and DCbus minus rail
* T/C < 50ppm/°C


Specifications

	Symbol	Parameter Definition	Min.	Max.	Units
Inverter	VDC	DC Bus Voltage	0	1000	V
	VCES	Collector Emitter Voltage	0	1200
	IC@100C	IGBTs continuous collector current (TC = 100 ºC)		50	A
	IC@25C	IGBTs continuous collector current (TC = 25 ºC)		100
	ICM	Pulsed Collector Current (Fig. 3, Fig. CT.5)		200
	IF@100C	Diode Continuous Forward Current (TC = 100 ºC)		50
	IF@25C	Diode Continuous Forward Current (TC = 25 ºC)		100
	IFM	Diode Maximum Forward Current		200
	VGE	Gate to Emitter Voltage	-20	+20	V
	PD@25	Power Dissipation (One transistor)		354	W
	PD@100	Power Dissipation (One transistor, TC = 100 ºC)		142
Power Module	MT	Mounting Torque		3.5	Nm
	TJ	Operating Junction Temperature	-10	+150
	TSTG	Storage Temperature Range	-40	+125
	VC-iso	Isolation Voltage to Base Copper Plate	-2500	+2500	V

Description

The EMP50P12B is a Power Integrated Module for Motor Driver applications with embedded sensing resistors on all three-phase output currents.

Each sensing resistor EMP50P12B's head is directly bonded to an external pin to reduce parasitic effects and achieve high accuracy on feedback voltages. Since their thermal coefficient is very low, no value compensation is required across the complete operating temperature range.

The device EMP50P12B comes in the EMPTM package, fully compatible in length, width and height with EconoPack 2 outline.