Purchase EN29LV512, In-stock EN29LV512 From SeekIC.
MFG:EON
Part Number: EN29LV512
MFG: EON
Description: The EN29LV512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory, organized as 65,536 bytes....
- Table of contents:
EN29LV512
-
Suppliers
DataSheet
General Description
EN29LV512 General Description
The EN29LV512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory, organized as 65,536 bytes. Any byte can be programmed typically in 8µs. The EN29LV512 features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV512 has separate Output Enable (OE</a>), Chip Enable (CE</a>), and Write Enable (WE</a>) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.
EN29LV512 Features
• Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read and write operations for high performance 3.3 volt microprocessors.
• High performance
- Full voltage range: access times as fast as 55 ns
- Regulated voltage range: access times as fast as 45ns
• Low power consumption (typical values at 5 MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 µA typical standby current (standard access time to active mode)
• Flexible Sector Architecture:
- Four 16 Kbyte sectors
- Supports full chip erase
- Individual sector erase supported
- Sector protection and unprotection:
Hardware locking of sectors to prevent program or erase operations within individual sectors
• High performance program/erase speed
- Byte program time: 8µs typical
- Sector erase time: 500ms typical
• JEDEC Standard program and erase commands
• JEDEC standard DATA</a> polling and toggle bits feature
• Single Sector and Chip Erase
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
Read or program another Sector during Erase Suspend Mode
• triple-metal double-poly triple-well CMOS Flash Technology
• Low Vcc write inhibit < 2.5V
• >100K program/erase endurance cycle
• Package options
- 32-pin PLCC
• Commercial and industrial Temperature Range
- Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read and write operations for high performance 3.3 volt microprocessors.
• High performance
- Full voltage range: access times as fast as 55 ns
- Regulated voltage range: access times as fast as 45ns
• Low power consumption (typical values at 5 MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 µA typical standby current (standard access time to active mode)
• Flexible Sector Architecture:
- Four 16 Kbyte sectors
- Supports full chip erase
- Individual sector erase supported
- Sector protection and unprotection:
Hardware locking of sectors to prevent program or erase operations within individual sectors
• High performance program/erase speed
- Byte program time: 8µs typical
- Sector erase time: 500ms typical
• JEDEC Standard program and erase commands
• JEDEC standard DATA</a> polling and toggle bits feature
• Single Sector and Chip Erase
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
Read or program another Sector during Erase Suspend Mode
• triple-metal double-poly triple-well CMOS Flash Technology
• Low Vcc write inhibit < 2.5V
• >100K program/erase endurance cycle
• Package options
- 32-pin PLCC
• Commercial and industrial Temperature Range
EN29LV512 Connection Diagram
EN29LV512-45RJC
PDF/DataSheet Download
- Datasheet: EN29LV512-45RJC
- File Size: 412849 KB
- Manufacturer: ETC [ETC]
- Click here to Download
- ·EN201D-05A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN201D-07A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN201D-10A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN201D-14A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN201D-20A
- FUJI [Fuji Electric]
- Z-TRAP ENE(Nominal varistor voltage 200 to 470V
- 233496 KB
- ·EN2-1H1
- NEC [NEC]
- Twin relay for motor and solenoid reversible control
- 195585 KB
- ·EN2-1H1S
- NEC [NEC]
- Twin relay for motor and solenoid reversible control
- 195585 KB
- ·EN2-1H1ST
- NEC [NEC]
- Twin relay for motor and solenoid reversible control
- 195585 KB
EN29LV512 Relative Products
EN29LV400A
The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The EN29LV400A features 3.0V voltage read and write operation, with ac...
EN29LV320AT-70TIP
The EN29LV320AT-70TIP is designed as a 32-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8s. It features 3.0V voltage read and write operation, wi...
EN29LV320
The EN29LV320 is a 32-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8s. The EN29LV320 features 3.0V voltage read and write operation, with access...
EN29LV160J
The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10s. The EN29LV160J features 3.0V voltage read and write operation, with acc...
EN29GL064
The EN29GL064 offers a fast page access time of 25 ns with a corresponding random access time as fast as 70 ns. It features a Write Buffer that allows a maximum of 16 words/32 bytes to be programmed in one operation, resulting in faster effective programming...
EN29F800
The EN29F800 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10s. The EN29F800 features 5.0V voltage read and write operation, with access tim...
Hotspot Suppliers Product
ADG333ABRZ
Price: 1.7-2 USD
monolithic CMOS device, SPDT switches, LC2MOS process
IDT79R3081-50M
Price: 3.85-4.85 USD
32-bit microprocessor, RIS controller, PLCC-84
circuit protection board
Price: 20-39 USD
circuit protection board, Memory Cards, Modules, standard
2SK3170
Price: 47-55 USD
MOS FET UHF power amplifier, 60 V, High power output, High gain
LQ5AW136T
Price: 0.1-1 USD
Color TFT-LCD Module, 13 inch, ACF-COG technology, Analog RGB
4N25
Price: 0.5-1 USD
Optocoupler, Phototransistor Output, With Base Connection
CS5341-CZZ
Price: 0.33-0.42 USD
CS5341-CZZ Cirrus Logic Audio A/D Converter ICs
CD4049UBF3A
Price: 1-2 USD
inverting hex buffer, 16CDIP, 9.5 mA, -0.5V to 20V, CD4049UBF3A, Texas Instruments
PT8211-S
Price: 0.1-2 USD
Digital-to-Analog Converter IC, SOP, CMOS Technology, Low Power Consumption
EKMM351VSN151MR25S
Price: 0.01-100 USD
large capacitance, aluminum electrolytic capacitor, 160 to 400V, Non solvent-proof type, 150uF
TIT044AB
Price: 0.2-0.7 USD
TIT044AB, Integrated Circuits (ICs), Texas Instruments, sop
DS21Q552
Price: 64.5-66 USD
BGA256, Low Power, 5V, CMOS, Low Power, transceiver, Multi-Chip Module
