DescriptionThe EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8s.The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 70ns to elimin...
EN29LV800C: DescriptionThe EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8s.The E...
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The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8s.The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 70ns to eliminate the need for WAIT statements in high-performance microprocessor systems.This device is designed to allow either single Sector or full chip erase operation, where each sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each sector.
Features of the EN29LV800C are:(1)JEDEC standard embedded erase and program algorithms; (2)JEDEC standard DATA# polling and toggle bits feature; (3)single sector and chip erase; (4)sector unprotect mode; (5)erase suspend / resume modes:read or program another sector during erase suspend mode; (6)hardware locking of sectors to prevent program or erase operations within individual sectors; (7)additionally, temporary sector unprotect allows code changes in previously locked sectors.
The absolute maximum ratings of the EN29LV800C can be summarized as:(1)storage temperature:-65 to 125;(2)ambient temperature with power applied:-55 to 125;(3)output short circuit current:200mA;(4)voltage with respect to ground Vcc:-0.5 to 4.0 V.The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins.This resets the device to reading array data (also applies to programming in Erase Suspend mode).Once programming begins, however, the device ignores reset commands until the operation is complete.The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during Erase Suspend).