EP1S10F484C6N

The EP1S10F484C6N is designed as one member of the Stratix family that is based on a 1.5-V, 0.13-m, all-layer copper SRAM process, with densities of up to 79,040 logic elements (LEs) and up to 7.5 Mbits of RAM. And this device can be optimized for DSP applications that enable efficient implementation of high-performance filters and multipliers.

Features of the EP1S10F484C6N are:(1)10,570 to 79,040 LEs; (2)Up to 7,427,520 RAM bits (928,440 bytes) available without reducing logic resources; (3)Up to 16 global clocks with 22 clocking resources per device region; (4)Support for numerous single-ended and differential I/O standards; (5)High-speed differential I/O support on up to 116 channels with up to 80 channels optimized for 840 megabits per second (Mbps); (6)Differential on-chip termination support for LVDS; (7)Support for 133-MHz PCI-X 1.0 in -5 speed-grade devices; (8)Support for 100-MHz PCI-X 1.0 in -6 and faster speed-grade devices; (9)Support for 66-MHz PCI-X 1.0 in -7 speed-grade devices; (10)Support for remote configuration updates.

The absolute maximum ratings of the EP1S10F484C6N can be summarized as:(1)Supply voltage: -0.5 to 2.4 V;(2)DC input voltage: -0.5 to 4.6 V;(3)DC output current, per pin: -25 to 40 mA;(4)Storage temperature: -65 to 150 °C;(5)Junction temperature: 135 °C. If you want to know more information such as the electrical characteristics about the EP1S10F484C6N, please download the datasheet in www.seekic.com or www.chinaicmart.com.