EP2C70F896C7N

The EP2C70F896C7N is one member of the EP2C70F family which is designed as the 1.2-V, 90-nm, all-layer copper SRAM that maximizes performance, and enables device densities approaching 180,000 equivalent logic elements (LEs). Various high-speed external memory interfaces are supported, including double data rate (DDR) SDRAM and DDR2 SDRAM, RLDRAM II, quad data rate (QDR) II SRAM, and single data rate (SDR) SDRAM.

Features of the EP2C70F896C7N are:(1)15,600 to 179,400 equivalent LEs;(2)New and innovative adaptive logic module (ALM), the basic building block of the Stratix II architecture, maximizes performance and resource usage efficiency;(3)Up to 9,383,040 RAM bits (1,172,880 bytes) available without reducing logic resources;(4)TriMatrix memory consisting of three RAM block sizes to implement true dual-port memory and first-in first-out (FIFO) buffers;(5)High-speed DSP blocks provide dedicated implementation of multipliers (at up to 450 MHz), multiply-accumulate functions, and finite impulse response (FIR) filters;(6)Up to 16 global clocks with 24 clocking resources per device region;(7)Clock control blocks support dynamic clock network enable/disable, which allows clock networks to power down to reduce power consumption in user mode;(8)High-speed differential I/O support with DPA circuitry for 1-Gbps performance.

The absolute maximum ratings of the EP2C70F896C7N can be summarized as:(1)Supply voltage:0.5 to 1.8 V;(2)Analog power supply for PLLs:0.5 to 1.8 V;(3)Digital power supply for PLLs:0.5 to 1.8 V;(4)DC input voltage:0.5 to 4.6 V;(5)DC output current, per pin:25 to 40 mA;(6)Storage temperature:65 to 150 °C;(7)Junction temperature:55 to 125 °C. If you want to know more information such as the electrical characteristics about the EP2C70F896C7N, please download the datasheet in www.seekic.com or www.chinaicmart.com.