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EPC1010

TRANS GAN 200V 12A BUMPED DIE

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SeekIC No. : 003433716 Detail

EPC1010: TRANS GAN 200V 12A BUMPED DIE

EPC1010 Data Sheet

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Part Number:
EPC1010
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: eGaN® Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride Gain : 11.5 dB at 500 MHz
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 12A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA Gate Charge (Qg) @ Vgs: 7.5nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 440pF @ 100V
Power - Max: - Mounting Type: Surface Mount
Package / Case: 7-SMD, Bump Lead Supplier Device Package: 7-LGA (3.6x1.6)    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25° C: 12A
Drain to Source Voltage (Vdss): 200V
Power - Max: -
Packaging: Cut Tape (CT)
Series: eGaN®
Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Gate Charge (Qg) @ Vgs: 7.5nC @ 5V
Input Capacitance (Ciss) @ Vds: 440pF @ 100V
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
Package / Case: 7-SMD, Bump Lead
Supplier Device Package: 7-LGA (3.6x1.6)


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