Position: Home  > All Categories> Integrated Circuits (ICs) > EPC1011

EPC1011

TRANS GAN 150V 12A BUMPED DIE

product image

EPC1011 Picture
See larger image
SeekIC No. : 003433717 Detail

EPC1011: TRANS GAN 150V 12A BUMPED DIE

EPC1011 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
EPC1011
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/13

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: eGaN® Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride Gain : 11.5 dB at 500 MHz
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 150V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 12A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) @ Vgs: 6.7nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 440pF @ 75V
Power - Max: - Mounting Type: Surface Mount
Package / Case: 7-LGA Supplier Device Package: 7-LGA (3.6x1.6)    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25° C: 12A
Drain to Source Voltage (Vdss): 150V
Power - Max: -
Packaging: Cut Tape (CT)
Series: eGaN®
Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 7-LGA (3.6x1.6)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 5V
Gate Charge (Qg) @ Vgs: 6.7nC @ 5V
Input Capacitance (Ciss) @ Vds: 440pF @ 75V
Package / Case: 7-LGA


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Discrete Semiconductor Products
T508N12TOF
MUR20040
Prototyping Products
AVT4168
DE1
Crystals and Oscillators
WT325BI0030.000000
2SB49
Test Equipment
TOP853
TOP2005
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
View more