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SeekIC No. : 003433912 Detail

EPC1015: TRANS GAN 40V 33A BUMPED DIE

EPC1015 Data Sheet

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Part Number:: EPC1015
Mfg:
Supply Ability:: 5000

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Upload time: 2024/4/30

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TRANS GAN 100V 25A BUMPED DIE

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Series:	eGaN®	Manufacturer:	EPC
FET Type:	GaNFET N-Channel, Gallium Nitride	Gain :	11.5 dB at 500 MHz
Transistor Type:	-	Current - Collector (Ic) (Max):	-
FET Feature:	Logic Level Gate	Drain to Source Voltage (Vdss):	40V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	33A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	4 mOhm @ 33A, 5V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	2.5V @ 9mA	Gate Charge (Qg) @ Vgs:	11.6nC @ 5V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	1100pF @ 20V
Power - Max:	-	Mounting Type:	Surface Mount
Package / Case:	Die Outline (11-Solder Bar)	Supplier Device Package:	Die Outline (11-Solder Bar)

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Gate Charge (Qg) @ Vgs: 11.6nC @ 5V
Drain to Source Voltage (Vdss): 40V
Power - Max: -
Current - Continuous Drain (Id) @ 25° C: 33A
Packaging: Cut Tape (CT)
Series: eGaN®
Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride
Input Capacitance (Ciss) @ Vds: 1100pF @ 20V
Package / Case: Die Outline (11-Solder Bar)
Supplier Device Package: Die Outline (11-Solder Bar)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA

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EPC1015

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