EPC2014, US $ .58-.67, EPC2014 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003430236 Detail

EPC2014: TRANS GAN 40V 10A BUMPED DIE

EPC2014 Data Sheet

US $ .58~.67 / Piece | Get Latest Price

Part Number:: EPC2014
Mfg:
Supply Ability:: 5000

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$.62
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$.58

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Recent History
What is this?

EPC2 evaluate
DescriptionThe EPC2 is designed as one kind of confuguration EPROM for FLEX devices. It is 1,695,6...
EPC2001 evaluate
US $2.4 - 3.6 / Piece

TRANS GAN 100V 25A BUMPED DIE
EPC2007 evaluate
US $1.03 - 1.89 / Piece

TRANS 100V 30MO BUMPED DIE

Product Details

Quick Details

Series:	eGaN®	Manufacturer:	EPC
FET Type:	GaNFET N-Channel, Gallium Nitride	Gain :	15.5 dB
Transistor Type:	-	Current - Collector (Ic) (Max):	-
FET Feature:	Logic Level Gate	Drain to Source Voltage (Vdss):	40V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	10A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	16 mOhm @ 5A, 5V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	2.5V @ 2mA	Gate Charge (Qg) @ Vgs:	2.48nC @ 5V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	300pF @ 20V
Power - Max:	-	Mounting Type:	Surface Mount
Package / Case:	5-LGA	Supplier Device Package:	5-LGA (1.7x1.1)

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)Alternate Packaging
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25° C: 10A
Power - Max: -
Series: eGaN®
Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride
Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Package / Case: 5-LGA
Supplier Device Package: 5-LGA (1.7x1.1)
Gate Charge (Qg) @ Vgs: 2.48nC @ 5V
Input Capacitance (Ciss) @ Vds: 300pF @ 20V

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EPC2014

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