EPC2001, US $ 2.4-3.6, EPC2001 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003433913 Detail

EPC2001: TRANS GAN 100V 25A BUMPED DIE

EPC2001 Data Sheet

US $ 2.4~3.6 / Piece | Get Latest Price

Part Number:: EPC2001
Mfg:
Supply Ability:: 5000

Price Break

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0~1
1~10
10~100
100~250

Unit Price
$3.6
$3.24
$2.64
$2.4

Processing time
15 Days
15 Days
15 Days
15 Days

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Recent History
What is this?

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Product Details

Quick Details

Series:	eGaN®	Manufacturer:	EPC
FET Type:	GaNFET N-Channel, Gallium Nitride	Gain :	15.5 dB
Transistor Type:	-	Current - Collector (Ic) (Max):	-
FET Feature:	Logic Level Gate	Drain to Source Voltage (Vdss):	100V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	25A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	7 mOhm @ 25A, 5V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	2.5V @ 5mA	Gate Charge (Qg) @ Vgs:	8nC @ 5V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	850pF @ 50V
Power - Max:	-	Mounting Type:	Surface Mount
Package / Case:	Die Outline (11-Solder Bar)	Supplier Device Package:	Die Outline (11-Solder Bar)

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 100V
Power - Max: -
Current - Continuous Drain (Id) @ 25° C: 25A
Series: eGaN®
Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride
Gate Charge (Qg) @ Vgs: 8nC @ 5V
Input Capacitance (Ciss) @ Vds: 850pF @ 50V
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Package / Case: Die Outline (11-Solder Bar)
Supplier Device Package: Die Outline (11-Solder Bar)

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EPC2001

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