ESM2012DV

Transistors Darlington NPN Darl Power Mod

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ESM2012DV Picture
SeekIC No. : 00217717 Detail

ESM2012DV: Transistors Darlington NPN Darl Power Mod

floor Price/Ceiling Price

Part Number:
ESM2012DV
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/4/26

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Product Details

Quick Details

Configuration : Single Dual Emitter Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 150 V Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 120 A Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : ISOTOP
Packaging : Tube    

Description

Collector- Base Voltage VCBO :
Maximum Collector Cut-off Current :
Power Dissipation :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 150 V
Configuration : Single Dual Emitter
Package / Case : ISOTOP
Maximum DC Collector Current : 120 A


Application

MOTORCONTROL
UPS
DC/DC & DC/AC CONVERTERS



Specifications

Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -5 V) 150 V
VCEO(sus)
VEBO
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC =0)
120
7
V
V
IC Collector Current 120 A
ICM Collector Peak Current (tp = 10 ms) 180 A
IB Base Current 2 A
IBM Base Peak Current (tp =10ms)
4 A
Ptot
Total Dissipation at Tc =25
175 W
Tstg Storage Temperature -55 to 150
Tj Max. Operating Junction Temperature 150
VISO Insulation Withstand Voltage (AC-RMS) 2500



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