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Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
290 Watts | 0.6/W | 200 | -65 to 150 | 16 A | 70V | 70V | 30V |
Silicon VDMOS and LDMOS transistors F1066 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM , MRI, Laser Driver and others.
"Polyfet"TM process F1066 features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance