FA38SA50

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 24 IDM Pulsed Drain Current 150 PD @TC = 25°C Power Dissipation 500 W Linear Derating Factor 4.0 W/°C VGS Gate-...

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SeekIC No. : 004340244 Detail

FA38SA50: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 24 IDM Pulsed Drain Current ...

floor Price/Ceiling Price

Part Number:
FA38SA50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 24
IDM Pulsed Drain Current 150
PD @TC = 25°C Power Dissipation 500 W
  Linear Derating Factor 4.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 580 mJ
IAR Avalanche Current 38 A
EAR Repetitive Avalanche Energy 50 mJ
dv/dt Peak Diode Recovery dv/dt 16 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150  
VISO Insulation Withstand Voltage (AC-RMS) 2.5 KV
  Mounting torque, M4 srew 1.3 N•m



Description

FA38SA50 Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The FA38SA50 SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry.




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