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Part Number: FA38SA50

 

 

 

 

Description: Third Generation HEXFETs from International Rectifier provide the designer with the best combination o...


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FA38SA50 General Description


Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry.

FA38SA50 Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 24
IDM Pulsed Drain Current 150
PD @TC = 25°C Power Dissipation 500 W
  Linear Derating Factor 4.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 580 mJ
IAR Avalanche Current 38 A
EAR Repetitive Avalanche Energy 50 mJ
dv/dt Peak Diode Recovery dv/dt 16 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 150  
VISO Insulation Withstand Voltage (AC-RMS) 2.5 KV
  Mounting torque, M4 srew 1.3 N•m

FA38SA50 datasheet

FA38SA50
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