FA38SA50LC

Manufacturer: Vishay Semiconductors
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 500V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 250µA
Power - Max: 500W
Current - Continuous Drain (Id) @ 25° C: 38A
Gate Charge (Qg) @ Vgs: 420nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V
Input Capacitance (Ciss) @ Vds: 6900pF @ 25V


Features:

·Fully Isolated Package
·Easy to Use and Parallel
·Low On-Resistance
·Dynamic dv/dt Rating
·Fully Avalanche Rated
·Simple Drive Requirements
·Low Drain to Case Capacitance
·Low Internal Inductance


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	38	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	24
IDM	Pulsed Drain Current	150
PD @TC = 25°C	Power Dissipation	500	W
	Linear Derating Factor	4.0	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	580	mJ
IAR	Avalanche Current	38	A
EAR	Repetitive Avalanche Energy	50	mJ
dv/dt	Peak Diode Recovery dv/dt	16	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
VISO	Insulation Withstand Voltage (AC-RMS)	2.5	kV
	Mounting torque, M4 srew	(1.3N•M)

Description

FA38SA50LC Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The FA38SA50LC SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry.