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MFG:IR D/C:SOT-227
Part Number: FA38SA50LC
MFG: IR
D/C: SOT-227
Description: Third Generation HEXFETs from International Rectifier provide the designer with the best combination o...
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FA38SA50LC
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DataSheet
General Description
FA38SA50LC General Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry.
FA38SA50LC Maximum Ratings
| Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
38 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
24 | |
| IDM | Pulsed Drain Current |
150 | |
| PD @TC = 25°C | Power Dissipation |
500 |
W |
| Linear Derating Factor |
4.0 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
580 |
mJ |
| IAR | Avalanche Current |
38 |
A |
| EAR | Repetitive Avalanche Energy |
50 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
16 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C |
| VISO | Insulation Withstand Voltage (AC-RMS) |
2.5 |
kV |
| Mounting torque, M4 srew |
(1.3N•M) |
FA38SA50LC Features
·Fully Isolated Package
·Easy to Use and Parallel
·Low On-Resistance
·Dynamic dv/dt Rating
·Fully Avalanche Rated
·Simple Drive Requirements
·Low Drain to Case Capacitance
·Low Internal Inductance
·Easy to Use and Parallel
·Low On-Resistance
·Dynamic dv/dt Rating
·Fully Avalanche Rated
·Simple Drive Requirements
·Low Drain to Case Capacitance
·Low Internal Inductance
FA38SA50LC
PDF/DataSheet Download
- Datasheet: FA38SA50LC
- File Size: 175276 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
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