Manufacturer: Vishay Semiconductors
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 500V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 338nC @ 10V
Power - Max: 625W
Input Capacitance (Ciss) @ Vds: 10000pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 57A
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 80 mOhm @ 34A, 10V
Features: Fully Isolated Package
Easy to Use and Parallel
Low On-Resistance
Dynamic dv/dt Rating
Fully Avalanche Rated
Simple Drive Requirements
Low Gate Charge Device
Low Drain to Case Capacitance
Low Internal InductanceSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
57 |
A
|
| ID @ TC =100°C |
Continuous Drain Current, VGS @ 10V |
36 |
IDM
|
Pulsed Drain Current |
228 |
| PD @TC=25 |
Power Dissipation |
625 |
W
|
| |
Linear Derating Factor |
5.0 |
W/ |
VGS
|
Gate-to-Source Voltage |
± 20 |
V |
EAS
|
Single Pulse Avalanche Energy |
725 |
mJ
|
IAR
|
Avalanche Current |
57 |
A
|
EAR
|
Repetitive Avalanche Energy |
62.5
|
mJ
|
dv/dt
|
Peak Diode Recovery dv/dt |
3.0 |
V/ns
|
TJ
TSTG
|
Operating Junction and
Storage Temperature Range |
-55 to + 150 |
°C
|
| VISO |
Insulation Withstand Voltage (AC-RMS) |
2.5 |
kV
|
| |
Mounting torque, M4 srew |
1.3 |
N*m |
DescriptionFA57SA50LC Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The FA57SA50LC SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry.
FA57SA50LC Data Sheet
