FA57SA50LCP

The FA57SA50LCP is designed as one kind of Power MOSFETs with current of 57A. It is the third generation power MOSFET from Vishay HPP which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 W. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry.

FA57SA50LCP has twelve festures. (1)Fully isolated package. (2)Easy to use and parallel. (3)Low on-resistance. (4)Dynamic dV/dt rating. (5)Fully avalanche rated. (6)Simple drive requirements. (7)Low gate charge device. (8)Low drain to case capacitance. (9)Low internal inductance. (10)UL pending. (11)Compliant to RoHS directive 2002/95/EC. (12)Designed for industrial level. Those are all the main features.

Some absolute maximum ratings of FA57SA50LCP have been concluded into several points as follow. (1)Its continuous drain current at VGS 10 V would be 57A at Tc=25°C and would be 36A at Tc=100°C. (2)Its pulsed drain current would be 228A. (3)Its power dissipation would be 625W. (4)Its linear derating factor would be 5.0W/°C. (5)Its gate to source voltage would be +/-20V. (6)Its single pulse avalanche energy would be 725mJ. (7)Its avalanche current would be 57A. (8)Its repetitive avalanche energy would be 62.5mJ. (9)Its peak diode recovery dV/dt would be 10V/ns. (10)Its operating junction and storage temperature range would be from -55°C to 150°C. (11)Its insulation withstand voltage (AC-RMS) would be 2.5kV. (12)Its mounting torque would be 1.3Nm. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of FA57SA50LCP are concluded as follow. (1)Its drain to source breakdown voltage would be min 500V. (2)Its breakdown voltage temperature coefficient would be typ 0.62V/°C. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!