FCA20N60

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.19 Ohms
Package / Case : TO-3P


Features:

* 650V @T_J  = 150°C
*Typ. R_DS(on)  = 0.15
* Ultra low gate charge (typ. Q_g  = 75nC)
* Low effective output capacitance (typ. Coss .eff = 165pF)
* 100% avalanche tested


Specifications

Symbol	Parameter	FCH20N60	FCA20N60	Unit
VDSS	Drain-Source Voltage	600		V
ID	Drain Current               - Continuous (TC = 25 )                                    - Continuous (TC = 100 )	20 12.5		A A
IDM	Drain Current - Pulsed                           (Note 1)	60		A
VGSS	Gate-Source voltage	±30		V
EAS	Single Pulsed Avalanche Energy            (Note 2)	690		mJ
IAR	Avalanche Current                                 (Note 1)	20		A
EAR	Repetitive Avalanche Energy                  (Note 1)	20.8		mJ
dv/dt	Peak Diode Recovery dv/dt                     (Note 3)	4.5		V/ns
PD	Power Dissipation         (T = 25)                                    - Derate above 25°C	208 1.67		W W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150		°C
TL	Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds	300		°C

Description

    FCA20N60 SuperFET^TM  is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an  advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

    This FCA20N60 advanced technology has been tailored  to minimize con- duction loss, provide superior switching  performance, and with- stand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system min- iaturization and higher efficiency.

Parameters:

Technical/Catalog Information	FCA20N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	190 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	3080pF @ 25V
Power - Max	208W
Packaging	Tube
Gate Charge (Qg) @ Vgs	98nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FCA20N60 FCA20N60