MOSFET 600V N-Channel SuperFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 20 A | ||
Resistance Drain-Source RDS (on) : | 0.19 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
Symbol | Parameter | FCH20N60 | FCA20N60 | Unit |
VDSS |
Drain-Source Voltage | 600 | V | |
ID |
Drain Current - Continuous (TC = 25 ) - Continuous (TC = 100 ) |
20 12.5 |
A A | |
IDM |
Drain Current - Pulsed (Note 1) | 60 | A | |
VGSS |
Gate-Source voltage | ±30 | V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) | 690 |
mJ | |
IAR |
Avalanche Current (Note 1) | 20 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) | 20.8 | mJ | |
dv/dt |
Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns | |
PD |
Power Dissipation (T = 25) - Derate above 25°C |
208 1.67 |
W W/°C | |
TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | °C | |
TL | Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds |
300 | °C |
FCH20N60 SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This FCH20N60 advanced technology has been tailored to minimize con- duction loss, provide superior switching performance, and with- stand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system min- iaturization and higher efficiency.
Technical/Catalog Information | FCH20N60 |
Vendor | Fairchild Semiconductor |
Category | Transistors, FETs, IGBTs |
Mounting Type | Through Hole |
Package Name | TO-247AD |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 600.0 V [Nom] |
Voltage Gate to Source (Vgs) | 30.0 V [Max] |
Continuous Drain Current (Id) | 20.00 A [Nom] |
Rds On (Max) @ Id, Vgs | 190 mOhms @ 10A, 10V |
Rds On (Typ) @ Id, Vgs | 150 mOhms @ 10A, 10V |
Input Capacitance (Ciss) | 3080.0 pF @ 25.0 V |
Gate Charge (Qg) | 98.00 nC @ 10.0 V |
Power Dissipation | 208.000 W [Max] |
Packaging | Tube |
Protection Diode(s) | Drain to Source |
Delay Time On | 62.00 ns [Typ] |
Delay Time Off | 230.00 ns [Typ] |
Rise Time | 140.000 ns [Typ] |
Fall Time | 65.000 ns [Typ] |
Vgs Min. | 3.00 V @ 250.0 A |
Vgs Max. | 5.00 V @ 250.0 A |
Drain Peak Current (Idm) | 60.000 A [Nom] |
Operating Junction Temperature | -55 °C [Min] |
Operating Junction Temperature | 150 °C [Max] |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FCH20N60 FCH20N60 |