FCH47N60

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Continuous Drain Current : 47 A
Resistance Drain-Source RDS (on) : 0.07 Ohms


Features:

* 650V @T_J  = 150°C
*Typ. R_DS(on) = 0.058
* Ultra Low Gate Charge (typ. Q_g = 210nC) 
* Low Effective Output Capacitance (typ. C_oss eff. = 420pF)
* 100% avalanche tested


Specifications

Symbol	Parameter	FCH20N60	FCA20N60	Unit
VDSS	Drain-Source Voltage	600		V
ID	Drain Current - Continuous (TC = 25 ) - Continuous (TC = 100)	47 29.7		A A
IDM	Drain Current - Pulsed                            (Note 1)	141		A
VGSS	Gate-Source voltage	±30		V
EAS	Single Pulsed Avalanche Energy               (Note 2)	1800		mJ
IAR	Avalanche Current                                     (Note 1)	47		A
EAR	Repetitive Avalanche Energy                     (Note 1)	41.7		mJ
dv/dt	Peak Diode Recovery dv/dt                        (Note 3)	4.5		V/ns
PD	Power Dissipation                        (TC = 25)                                               - Derate above 25°C	417 3.33		W W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150		°C
TL	Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds	300		°C

Description

    FCH47N60 SuperFET^TM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an  advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

    This FCH47N60 advanced technology has been tailored  to minimize con- duction loss, provide superior switching  performance, and with- stand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system min- iaturization and higher efficiency.

Parameters:

Technical/Catalog Information	FCH47N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	47A
Rds On (Max) @ Id, Vgs	70 mOhm @ 23.5A, 10V
Input Capacitance (Ciss) @ Vds	8000pF @ 25V
Power - Max	417W
Packaging	Tube
Gate Charge (Qg) @ Vgs	270nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FCH47N60 FCH47N60