FCPF7N60T

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Power - Max: 31W
Drain to Source Voltage (Vdss): 600V
Gate Charge (Qg) @ Vgs: 30nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 7A
Packaging: Tube
Mounting Type: Through Hole
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
Package / Case: TO-220-3 Full Pack
Input Capacitance (Ciss) @ Vds: 920pF @ 25V
Supplier Device Package: TO-220F
Manufacturer: Fairchild Semiconductor
Series: SuperFET™


Parameters:

Technical/Catalog Information	FCPF7N60T
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	600 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds	920pF @ 25V
Power - Max	31W
Packaging	Tube
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FCPF7N60T FCPF7N60T