FDAF59N30

MOSFET 300V 34A NCH MOSFET

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FDAF59N30 Picture
SeekIC No. : 00161030 Detail

FDAF59N30: MOSFET 300V 34A NCH MOSFET

floor Price/Ceiling Price

Part Number:
FDAF59N30
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 34 A
Resistance Drain-Source RDS (on) : 0.056 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PF Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 34 A
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 0.056 Ohms
Package / Case : TO-3PF


Features:

• 34A, 300V, RDS(on) = 0.056Ω @VGS = 10 V
• Low gate charge ( typical 77 nC)
• Low Crss ( typical 80 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter
FDAF59N30
Unit
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed (Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300
34
20
136
±30
1734
34
16.1
4.5
161
1.3
-55 to +150
300
V
AA
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C



Description

These FDAF59N30 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDAF59N30 are well suited for high efficient switched mode power supplies and active power factor correction.




Parameters:

Technical/Catalog InformationFDAF59N30
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C34A
Rds On (Max) @ Id, Vgs56 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds 4670pF @ 25V
Power - Max161W
PackagingTube
Gate Charge (Qg) @ Vgs100nC @ 10V
Package / CaseTO-3PF
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDAF59N30
FDAF59N30



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