Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 250 V
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.041 Ohms
Continuous Drain Current
: 34 A
Package / Case
: TO-3PF
Features: * 34A, 250V, RDS(on) = 0.041 @VGS = 10 V
* Low gate charge ( typical 77 nC)
* Low Crss ( typical 84 pF)
* Fast switching
* Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FDA59N25 |
Unit |
| VDSS |
Drain-Source Voltage |
250 |
V |
| VDS(Avalanche) |
Repetitive Avalanche Voltage (Note 1, 2) |
300 |
V |
| ID |
Drain Current - Continuous (TC = 25)
- Continuous (TC = 100) |
34
21.5 |
A
A |
| IDM |
Drain Current - Pulsed (Note 1) |
136 |
A |
| VGSS |
Gate-Source voltage |
30
± |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
1894 |
mJ |
| IAR |
Avalanche Current (Note 1) |
34 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
11.5 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
115
0.93 |
W
W/ |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
TL
|
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds |
300 |
|
Description These FDAF69N25 N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDAF69N25 are well suited for high effi-ciency switching DC/DC converters and switched mode power supplies.
Parameters: | Technical/Catalog Information | FDAF69N25 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 34A |
| Rds On (Max) @ Id, Vgs | 41 mOhm @ 17A, 10V |
| Input Capacitance (Ciss) @ Vds | 4640pF @ 25V |
| Power - Max | 115W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 100nC @ 10V |
| Package / Case | TO-3PF |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDAF69N25
FDAF69N25
|
FDAF69N25 Data Sheet
