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FDB16AN08A0

MOSFET Discrete Auto N-Ch UltraFET Trench

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SeekIC No. : 00145953 Detail

FDB16AN08A0: MOSFET Discrete Auto N-Ch UltraFET Trench

FDB16AN08A0 Data Sheet

floor Price/Ceiling Price

US $ .69~1.07 / Piece | Get Latest Price
Part Number:
FDB16AN08A0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.07
  • $.86
  • $.78
  • $.69
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 58 A
Resistance Drain-Source RDS (on) : 0.013 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 75 V
Package / Case : TO-263
Continuous Drain Current : 58 A
Resistance Drain-Source RDS (on) : 0.013 Ohms at 10 V


Features:

*rDS(ON)  = 13m (Typ.), VGS = 10V, ID = 58A 
*Qg (tot) = 28nC (Typ.), VGS = 10V
* Low Miller Charge
* Low Qrr Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
Formerly developmental type 82660


Application

* 42V Automotive Load Control
* Starter / Alternator Systems
* Electronic Power Steering Systems
* Electronic Valve Train Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V systems


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 75 V
VGS Gate to Source Voltage ±20
V
ID Drain Current
Continuous (TC = 25, VGS = 10V) 		 58 A
Continuous (TC = 100, VGS = 10V) 44  
Continuous (Tamb = 25, VGS= 10V, with RJA = 43/W) 9 A
Pulsed Figure 4 A
EAS Single Pulse Avalanche Energy (Note 1) 117 mJ
PD Power dissipation 135 W
Derate above 25 0.9 W/
TJ , TSTG Operating and Storage Temperature -55 to 175



Parameters:

Technical/Catalog InformationFDB16AN08A0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C58A
Rds On (Max) @ Id, Vgs16 mOhm @ 58A, 10V
Input Capacitance (Ciss) @ Vds 1857pF @ 25V
Power - Max135W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs42nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB16AN08A0
FDB16AN08A0



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