FDB3860

The FDB3860 is N-Channel PowerTrench® MOSFET. It is rugged gate version of  Fairchild Semiconductor's advanced Power Trench® process. The applications of it are DC-AC conversion, synchronous rectifier.

The features of FDB3860 can be summarized as:(1)Max rDS(on) = 37 m at VGS = 10 V, ID = 5.9 A; (2)High performance trench technology for extremely low rDS(on); (3)100% UIL tested; (4)RoHS Compliant.

The absolute maximum ratings of FDB3860 are:(1)Drain to Source Voltage:100 V; (2)Gate to Source Voltage:±20 V; (3)Drain Current:Continuous (Silicon limited)TC = 25°C..30A, Continuous TA = 25 °C..6.4A, Pulsed..60A; (4)Single Pulse Avalanche Energy:96 mJ; (5)Power Dissipation: TC = 25 °C..71W, TA = 25 °C..3.1W; (6)Operating and Storage Junction Temperature Range:-55°C to +150 °C.

The electrical characteristics of the FDB3860 are:(1)drain to source breakdown voltage:100V;(2)gate to source leakage current:±100nA;(3)gate to source threshold voltage:2.5V to 4.5V;(4)input capacitance:1310pF to 1740pF;(5)output capacitance:100pF to 130pF;(6)turn-on delay time:12ns to 22ns;(7)turn-off delay time:17ns to 31ns;(8)rise time:6ns to 12ns;(9)fall time:3ns to 10ns.

If you want to know more information such as the electrical characteristics about the FDB3860, please download the datasheet in www.seekic.com or www.chinaicmart.com .