FDB5690

MOSFET 60V N-Channel Power Trench

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FDB5690 Picture
SeekIC No. : 00162901 Detail

FDB5690: MOSFET 60V N-Channel Power Trench

floor Price/Ceiling Price

Part Number:
FDB5690
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.027 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : TO-263
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.027 Ohms at 10 V


Features:

• 32 A, 60 V.  R DS(ON)=  0.027 Ω @ VGS = 10 V
                      R DS(ON)= 0.032 Ω @ VGS = 6  V
•  Critical DC electrical parameters specified at evevated temperature.
•  Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
•  High performance trench technology for extremely low  R DS(ON)
•  175°C maximum junction temperature rating.



Specifications

Symbol
Parameter
FDP5690
FDB5690
Units
VDSS
Drain-Source Voltage
80
V
VGSS
Gate-Source Voltage
± 20
V
ID
 Drain Current - Continuous    
                       - Pulsed       
32
A
100
PD
Total Power Dissipation @ TC = 25           
         
58
W
                    Derate above 25 
0.4
W/°C
TJ, Tstg
Operating and Storage Temperature Range
-65 to +175
°C



Description

This FDB5690 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs FDB5690 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDB5690
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C32A
Rds On (Max) @ Id, Vgs27 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 1120pF @ 25V
Power - Max58W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs33nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB5690
FDB5690
FDB5690DKR ND
FDB5690DKRND
FDB5690DKR



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