FDB6021P

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : TO-263
Continuous Drain Current : 28 A
Resistance Drain-Source RDS (on) : 0.03 Ohms at - 4.5 V


Features:

*  28 A, 20 V.  R_DS(ON) = 30 m @ V_GS  = 4.5 V 
                             R_DS(ON)  = 40 m @ V _GS  = 2.5 V 
                             R_DS(ON)  = 65 m @ V_GS  = 1.8 V 
*  Critical DC electrical parameters specified at elevated temperature
*  High performance trench technology for extremely low RDS(ON) 
*  175°C maximum junction temperature rating


Application

*  Battery management 
*  Load switch
*  Voltage regulator


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	± 8	V
ID	Drain Current Continuous (Note 1) Pulsed (Note 1)	28	A
		80
PD	Total Power Dissipation @ TC = 25 Derate above 25	37	W
		0.25	W°C
TJ, TSTG	Operating and Storage Junction Temperature Range	65 to +175	°C

Description

  This FDB6021P P-Channel power MOSFET uses Fairchild's low voltage PowerTrench process. It has been optimized for power management applications.  


Parameters:

Technical/Catalog Information	FDB6021P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	28A
Rds On (Max) @ Id, Vgs	30 mOhm @ 14A, 4.5V
Input Capacitance (Ciss) @ Vds	1890pF @ 10V
Power - Max	37W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	28nC @ 4.5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB6021P FDB6021P