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FDB6030BL

MOSFET N-Channel PowerTrench

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SeekIC No. : 00159724 Detail

FDB6030BL: MOSFET N-Channel PowerTrench

FDB6030BL Data Sheet

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Part Number:
FDB6030BL
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.018 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 40 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.018 Ohms at 10 V


Features:

* 40 A, 30 V. RDS(ON)  = 0.018 @ VGS  = 10 V
                     RDS(ON)  = 0.024 @ VGS = 4.5 V.
 *  Critical DC electrical parameters specified at elevated temperature.
*  Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
*  High performance trench technology for extremely  low RDS(ON).
*  175 maximum junction temperature rating.


Specifications

Symbol Parameter FDP6030BL FDB6030BL Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Maximum Drain Current - Continuous (Note 1)
- Pulsed		 40 A

120
PD Total Power Dissipation @ TC = 25 60 W
Derate above 25
0.36		 W/
TJ, TSTG Operating and Storage Junction Temperature Range

-65 to +175

  



Description

  This FDB6030BL N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

  These MOSFETs FDB6030BL feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDB6030BL
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs18 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 1160pF @ 15V
Power - Max60W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs17nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB6030BL
FDB6030BL



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