Position: Home  > All Categories> Integrated Circuits (ICs) > FDB6030BL

FDB6030BL

MOSFET N-Channel PowerTrench

product image

FDB6030BL Picture
See larger image
SeekIC No. : 00159724 Detail

FDB6030BL: MOSFET N-Channel PowerTrench

FDB6030BL Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FDB6030BL
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.018 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 40 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.018 Ohms at 10 V


Features:

* 40 A, 30 V. RDS(ON)  = 0.018 @ VGS  = 10 V
                     RDS(ON)  = 0.024 @ VGS = 4.5 V.
 *  Critical DC electrical parameters specified at elevated temperature.
*  Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
*  High performance trench technology for extremely  low RDS(ON).
*  175 maximum junction temperature rating.


Specifications

Symbol Parameter FDP6030BL FDB6030BL Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Maximum Drain Current - Continuous (Note 1)
- Pulsed		 40 A

120
PD Total Power Dissipation @ TC = 25 60 W
Derate above 25
0.36		 W/
TJ, TSTG Operating and Storage Junction Temperature Range

-65 to +175

  



Description

  This FDB6030BL N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

  These MOSFETs FDB6030BL feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDB6030BL
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs18 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 1160pF @ 15V
Power - Max60W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs17nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB6030BL
FDB6030BL



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Circuit Protection
A50QS75-4Y
F-17*77
Integrated Circuits (ICs)
TA8435H
1MB12-140
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
View more