MOSFET N-Ch PowerTrench Logic Level
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 56 A | ||
Resistance Drain-Source RDS (on) : | 0.009 Ohms at 10 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 100 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263AB | Packaging : | Reel |
Symbol | Parameter | Ratings | Units |
VDSS | Drain-Source Voltage | 30 | V |
VGSS | Gate-Source Voltage | ±20 | V |
ID | Drain Current Continuous (Note 1) Pulsed (Note 1) |
56 | A |
160 | |||
PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
65 | W |
0.43 | W/°C | ||
TJ, TSTG | Operating and Storage Junction Temperature Range | 65 to +100 | °C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
275 | °C |
This FDB7030BLS MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET FDB7030BLS is designed to maximize power conversion efficiency, providing a low R DS(ON) and low gate charge. The FDP7030BLS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP7030BLS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP7030BL in parallel with a Schottky diode.