FDB7030BLS

MOSFET N-Ch PowerTrench Logic Level

product image

FDB7030BLS Picture
SeekIC No. : 00164808 Detail

FDB7030BLS: MOSFET N-Ch PowerTrench Logic Level

floor Price/Ceiling Price

Part Number:
FDB7030BLS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 56 A
Resistance Drain-Source RDS (on) : 0.009 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 100 C Mounting Style : SMD/SMT
Package / Case : TO-263AB Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 56 A
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 0.009 Ohms at 10 V
Maximum Operating Temperature : + 100 C


Features:

·  56 A, 30 V. R DS(ON) = 10.5 mW @ VGS = 10 V
                     R DS(ON) = 16.5 mW @ VGS = 4.5 V
·  Includes SyncFET Schottky body diode
·  Low gate charge (15nC typical)
·  High performance trench technology for extremely low R DS(ON) and fast switching
·  High power and current handling capability



Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current Continuous (Note 1)
                      Pulsed (Note 1)
56 A
160
PD Total Power Dissipation @ TC = 25°C
                    Derate above 25°C
65 W
0.43 W/°C
TJ, TSTG Operating and Storage Junction Temperature Range 65 to +100 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275 °C



Description

This FDB7030BLS MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET FDB7030BLS is designed to maximize power conversion efficiency, providing a low R DS(ON) and low gate charge. The FDP7030BLS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP7030BLS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP7030BL in parallel with a Schottky diode.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optoelectronics
Computers, Office - Components, Accessories
Semiconductor Modules
Isolators
Tapes, Adhesives
803
View more