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FDB8874

MOSFET 30V N-Channel PowerTrench

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SeekIC No. : 00163614 Detail

FDB8874: MOSFET 30V N-Channel PowerTrench

FDB8874 Data Sheet

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Part Number:
FDB8874
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 121 A
Resistance Drain-Source RDS (on) : 0.0047 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Package / Case : TO-263
Continuous Drain Current : 121 A
Resistance Drain-Source RDS (on) : 0.0047 Ohms at 10 V


Features:

•rDS(ON) = 4.7mΩ , VGS = 10V, ID = 40A
•rDS(ON)  = 6.0mΩ , VGS = 4.5V, ID = 40A
• High performance trench technology for extremely low rDS(ON)
• Low gate charge
• High power and current handling capability


Application

• DC/DC converters


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
Continuous (TC = 25, VGS = 10V)   (Note 1)
        121
A
Continuous (TC = 100, VGS = 10V) (Note 1)
107
A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)
21
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 2)
105
mJ
PD
Power dissipation
110
W
Derate above 25
0.73
W/°C
TJ, Tstg
Operating and Storage Temperature
-55 to 175
°C



Description

This FDB8874 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low rDS(ON) and fast switching speed.




Parameters:

Technical/Catalog InformationFDB8874
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C121A
Rds On (Max) @ Id, Vgs4.7 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 3130pF @ 15V
Power - Max110W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs72nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB8874
FDB8874



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