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FDB8896

MOSFET 30V N-Channel PowerTrench

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SeekIC No. : 00150384 Detail

FDB8896: MOSFET 30V N-Channel PowerTrench

FDB8896 Data Sheet

floor Price/Ceiling Price

US $ .44~.66 / Piece | Get Latest Price
Part Number:
FDB8896
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.66
  • $.58
  • $.51
  • $.44
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 93 A
Resistance Drain-Source RDS (on) : 5.7 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Resistance Drain-Source RDS (on) : 5.7 mOhms
Package / Case : TO-263
Continuous Drain Current : 93 A


Features:

• rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low rDS(ON)
• Low gate charge
• High power and current handling capability




Application

·DC/DC converters




Specifications

Symbol
Parameter
Ratings
Units
VDSS Drain to Source Voltage
30
V
VGS Gate to Source Voltage
±20
V
ID Drain Current
Continuous (TC=25, VGS = 10V)
93
A
Continuous (TC = 25, VGS = 4.5V)
85
A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)
19
A
Pulsed
Figure 4
A
EAS Single Pulse Avalanche Energy (Note 1)
74
mJ
PD Power dissipation
80
W
Derate above 25
0.53
W/
TJ, TSTG Operating and Storage Temperature
-55 to 175




Product Product status Eco Status Pricing* Package type Leads Packing method Package Drawing Package Marking Convention**
FDB8896 Full Production RoHS Compliant $0.84 TO-263(D2PAK) 2 TAPE REEL TS2A Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: FDB Line 3: 8896
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDB8896 is available. Click here for more information .





Description

This FDB8896 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.






Parameters:

Technical/Catalog InformationFDB8896
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C93A
Rds On (Max) @ Id, Vgs5.7 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 2525pF @ 15V
Power - Max80W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs67nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB8896
FDB8896
FDB8896DKR ND
FDB8896DKRND
FDB8896DKR



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