FDC2612

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Configuration : Single Quad Drain
Package / Case : SSOT-6
Continuous Drain Current : 1.1 A
Resistance Drain-Source RDS (on) : 0.725 Ohms


Features:

• 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching speed
• Low gate charge (8nC typical)


Application

• DC/DC converter


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		200 ± 20 1.1 4 1.6 0.8 −55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b)
TJ, TSTG	Operating and Storage Junction Temperature Range

Description

This FDC2612 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Parameters:

Technical/Catalog Information	FDC2612
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	1.1A
Rds On (Max) @ Id, Vgs	725 mOhm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds	234pF @ 100V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	11nC @ 10V
Package / Case	SSOT-6
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC2612 FDC2612