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Part Number: FDC2612

 

 

 

 

Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC conver...


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FDC2612 General Description


This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FDC2612 Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
200
± 20
1.1
4
1.6
0.8
−55 to +150
V
V

A

W
°C
ID
Drain Current Continuous
Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range

FDC2612 Features

• 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching speed
• Low gate charge (8nC typical)

FDC2612 Typical Application

• DC/DC converter

FDC2612 Connection Diagram

FDC2612  Connection Diagram

FDC2612 datasheet

FDC2612
PDF/DataSheet Download

  • Datasheet: FDC2612
  • File Size: 206584 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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