FDC2612_F095 Selling Leads, Price trend , Fairchild Semiconductor, FDC2612_F095 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00159704 Detail

FDC2612_F095: MOSFET 200V 1.1A N-CH POWERTRENCH

FDC2612_F095 Data Sheet

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Part Number:: FDC2612_F095
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2025/12/4

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MOSFET 200V 1.1A N-CH POWERTRENCH

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	1.1 A
Resistance Drain-Source RDS (on) :	725 mOhms	Configuration :	Single Quad Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SuperSOT-6	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Configuration : Single Quad Drain
Continuous Drain Current : 1.1 A
Package / Case : SuperSOT-6
Resistance Drain-Source RDS (on) : 725 mOhms

Parameters:

Technical/Catalog Information	FDC2612_F095
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	1.1A
Rds On (Max) @ Id, Vgs	725 mOhm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds	234pF @ 100V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	11nC @ 10V
Package / Case	SuperSOT-6
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC2612_F095 FDC2612_F095

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FDC2612_F095

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