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MFG:Fairchild  Package Cooled:SSOT-6  D/C:07+  

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Part Number: FDC3601N

 

MFG: Fairchild

Package Cooled: SSOT-6

D/C: 07+

Description: These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTren...


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FDC3601N General Description


These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

FDC3601N Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
ID
 Drain Current - Continuous  (Note 1a)
                       - Pulsed
1.0
A
4.0
PD
 Power Dissipation for Single Operation  (Note 1a)
                                                                (Note 1b)
                                                                (Note 1c)
0.96
W
0.9
0.7
TJ, Tstg
Operating and Storage Junction Temperature Range
−55 to +150
°C

FDC3601N Features

• 1.0 A, 100 V. R DS(ON)=  500 mΩ @ VGS = 10 V
                       R DS(ON)=  550 mΩ @ VGS = 6.0 V
• Low gate charge (3.7nC typical)
• Fast switching speed.
• High performance trench technology for extremely low R DS(ON)
• SuperSOTTM-6 package: small footprint 72%
   (smaller than standard SO-8); low profile (1mm thick).

FDC3601N Typical Application

• Load switch
• Battery protection
• Power management

FDC3601N datasheet

FDC3601N
PDF/DataSheet Download

  • Datasheet: FDC3601N
  • File Size: 94172 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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