FDC3601N

MOSFET Dual N-Ch 100V Spec Power Trench

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SeekIC No. : 00149028 Detail

FDC3601N: MOSFET Dual N-Ch 100V Spec Power Trench

floor Price/Ceiling Price

US $ .17~.27 / Piece | Get Latest Price
Part Number:
FDC3601N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.27
  • $.23
  • $.19
  • $.17
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 0.5 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.5 Ohms
Continuous Drain Current : 1 A


Features:

• 1.0 A, 100 V. R DS(ON)=  500 mΩ @ VGS = 10 V
                       R DS(ON)=  550 mΩ @ VGS = 6.0 V
• Low gate charge (3.7nC typical)
• Fast switching speed.
• High performance trench technology for extremely low R DS(ON)
• SuperSOTTM-6 package: small footprint 72%
   (smaller than standard SO-8); low profile (1mm thick).



Application

• Load switch
• Battery protection
• Power management



Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
ID
 Drain Current - Continuous  (Note 1a)
                       - Pulsed
1.0
A
4.0
PD
 Power Dissipation for Single Operation  (Note 1a)
                                                                (Note 1b)
                                                                (Note 1c)
0.96
W
0.9
0.7
TJ, Tstg
Operating and Storage Junction Temperature Range
−55 to +150
°C



Description

These FDC3601N N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices FDC3601N have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.




Parameters:

Technical/Catalog InformationFDC3601N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C1A
Rds On (Max) @ Id, Vgs500 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds 153pF @ 50V
Power - Max700W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs5nC @ 10V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC3601N
FDC3601N



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