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FDC3512

MOSFET 80V N-Ch PowerTrench

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SeekIC No. : 00148594 Detail

FDC3512: MOSFET 80V N-Ch PowerTrench

FDC3512 Data Sheet

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US $ .31~.46 / Piece | Get Latest Price
Part Number:
FDC3512
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • $.46
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  • Processing time
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Upload time: 2024/4/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 0.077 Ohms Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 80 V
Configuration : Single Quad Drain
Continuous Drain Current : 3 A
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.077 Ohms


Features:

•  3.0 A, 80 V  R DS(ON)= 77 mΩ @ VGS = 10 V 
                      R DS(ON) = 88 mΩ @ VGS =  6 V
•  High performance trench technology for extremely low R DS(ON)
•  Low gate charge (13nC typ)
•  High power and current handling capability 
•  Fast switching speed


Application

•  DC/DC converter


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
80
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current - Continuous    (Note 1a)
                       - Pulsed
 
3.0
A
20
PD
Maximum Power Dissipation   (Note 1a)
                                               (Note 1b)
1.6
W
0.8
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C



Description

This FDC3512 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low RDS(ON) and fast switching speed.




Parameters:

Technical/Catalog InformationFDC3512
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs77 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 634pF @ 40V
Power - Max800mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs18nC @ 10V
Package / CaseSSOT-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC3512
FDC3512



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