FDC365P

The is FDC365P P-Channel PowerTrench® MOSFET. It has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low  rDS(on)  and optimized Bvdss capability to offer superior performance benefit in the applications. The applications of it are inverter, power supplies.

The features of FDC365P can be summarized as:(1)Max rDS(on) = 55m at VGS = -10V, ID = -4.2A; (2)Max rDS(on) = 80m at VGS = -4.5V, ID = -3.2A; (3)RoHS Compliant.

The absolute maximum ratings of FDC365P are:(1)Drain to Source Voltage:-35 V; (2)Gate to Source Voltage:±20 V; (3)drain current:Continuous..-4.3A, Pulsed0..-20A; (4)Power Dissipation:1.6W or 0.8W; (5)Operating and Storage Junction Temperature Range:-55°C to +150 °C.

The electrical characteristics of the FDC365P are:(1)drain to source breakdown voltage:-35V;(2)zero gate voltage drain current:-1uA;(3)gate to source threshold voltage:-1V to -3V;(4)forward transconductance:8.7S;(5)input capacitance:530pF  to 705pF;(6)output capacitance:105pF to 135pF;(7)turn-on delay time:7ns to 13ns;(8)turn-off delay time:15ns to 28ns;(9)rise time:3ns  to 10ns;(10)fall time:3ns to 10ns.

If you want to know more information such as the electrical characteristics about the FDC365P, please download the datasheet in www.seekic.com or www.chinaicmart.com .