FDC5614P

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 60 V
Configuration : Single Quad Drain
Resistance Drain-Source RDS (on) : 0.105 Ohms
Continuous Drain Current : 3 A
Package / Case : SSOT-6


Features:

•  3 A,  60 V.  R _DS(ON) = 0.105 Ω @ V_GS = 10 V 
                           R _DS(ON)  = 0.135 Ω @ V_GS = 4.5 V
•  Fast switching speed 
•  High performance trench technology for extremely low R _DS(ON)


Application

•  DC-DC converters
•  Load switch
•  Power management


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	60	V
VGSS	Gate-Source Voltage	± 20	V
ID,	Drain Current - Continuous       (Note 1a)                        - Pulsed	3.0	A
		20
PD	Maximum Power Dissipation     (Note 1a)                                                  (Note 1b)	1.6	W
		0.8
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDC5614P 60V P-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.


Parameters:

Technical/Catalog Information	FDC5614P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	105 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	759pF @ 30V
Power - Max	800mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	24nC @ 10V
Package / Case	SSOT-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC5614P FDC5614P FDC5614PDKR ND FDC5614PDKRND FDC5614PDKR