FDC6020C

MOSFET Complementary PowerTrench

product image

FDC6020C Picture
SeekIC No. : 00163284 Detail

FDC6020C: MOSFET Complementary PowerTrench

floor Price/Ceiling Price

Part Number:
FDC6020C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/25

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : +/- 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : - 4.2 A, 5.9 A
Resistance Drain-Source RDS (on) : 0.055 Ohms Configuration : Dual Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Gate-Source Breakdown Voltage : +/- 12 V
Drain-Source Breakdown Voltage : +/- 20 V
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.055 Ohms
Configuration : Dual Dual Source
Continuous Drain Current : - 4.2 A, 5.9 A


Features:

•  Q14.2 A, 20V.   RDS(ON)  = 55 mΩ @ VGS =4.5 V 
                                  RDS(ON)  = 82 mΩ @ VGS =2.5 V
•  Q25.9 A,   20V.    RDS(ON)  = 27 mΩ @ VGS =  4.5 V 
                                  RDS(ON)  = 39 mΩ @ VGS =  2.5 V 
•  Low gate charge
•  High performance trench technology for extremely low RDS(ON).  
•  FLMP SSOT-6 package:  Enhanced thermal performance in industry-standard package size



Application

•  DC/DC converter 
• Load switch
• Motor Driving



Specifications

Symbol
Parameter
Q1
Q2
Units
VDSS
Drain-Source Voltage
20
20
V
VGSS
Gate-Source Voltage
±12
±12
V
ID, IO
Drain Current - Continuous    
                       - Pulsed
 
4.2
5.9
A
20
20
PD
Power Dissipation for Dual Operation (Note1a)                                            
1.6
W
Power Dissipation for single Operation  (Note 1a)
                                                               (Note 1b)
1.8
1.2
TJ, Tstg
Operating and Storage Tempature Ranger
-55 to +150
°C



Description

These FDC6020C N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices FDC6020C are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




Parameters:

Technical/Catalog InformationFDC6020C
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C5.9A, 4.2A
Rds On (Max) @ Id, Vgs27 mOhm @ 5.9A, 4.5V
Input Capacitance (Ciss) @ Vds 677pF @ 10V
Power - Max1.2W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs8nC @ 4.5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC6020C
FDC6020C
FDC6020CCT ND
FDC6020CCTND
FDC6020CCT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Circuit Protection
Isolators
Fans, Thermal Management
Power Supplies - Board Mount
Programmers, Development Systems
Static Control, ESD, Clean Room Products
View more