FDC602P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 5.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Quad Drain
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.035 Ohms


Features:

5.5 A,  12 V  R_DS(ON) = 0.033 @ V_GS = 4.5 V 
                             R_DS(ON) = 0.052 @ V_GS = 2.5 V 
Fast switching speed. 
High performance trench technology for extremely low R_DS(ON) .


Application

Battery management 
Load switch
Battery protection


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	12	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current  Continuous  (Note 1a)                        Pulsed	-5.5	A
		-30
PD	Maximum Power Dissipation   (Note 1a)                                                (Note 1b)	1.6	W
		0.8
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDC602P P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild's advanced PowerTrench process.  It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).  

Parameters:

Technical/Catalog Information	FDC602P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	35 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1456pF @ 10V
Power - Max	800mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	20nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC602P FDC602P FDC602PDKR ND FDC602PDKRND FDC602PDKR