FDC6036P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 5 A
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.044 Ohms
Configuration : Dual Dual Source


Features:

5 A,  20 V.  R_DS(ON) =  44  m @ VGS = 4.5 V
                           R_DS(ON) =  64  m @ VGS = 2.5 V
                           R_DS(ON) =  95  m@ VGS = 1.8 V
Low gate charge, High Power and Current handling capability
High performance trench technology for extremely low R_DS(ON)
FLMP SSOT-6 package:  Enhanced thermal performance in industry-standard package size

Application

Battery management/Charger Application 
Load switch


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current  Continuous  (Note 1a)                        Pulsed	-5	A
		-20
PD	Maximum Power Dissipation   (Note 1a)                                                (Note 1b)	1.8	W
		0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDC6036P dual P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SSOT-6, the R_DS(ON) and thermal properties of the device are optimized for battery power management applications.  

Parameters:

Technical/Catalog Information	FDC6036P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	44 mOhm @ 5A, 4.5V
Input Capacitance (Ciss) @ Vds	992pF @ 10V
Power - Max	900mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6036P FDC6036P FDC6036PCT ND FDC6036PCTND FDC6036PCT