FDC606P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : - 12 V
Configuration : Single Quad Drain
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.021 Ohms


Features:

6 A,  12 V.  R_DS(ON) = 26 m @ VGS = 4.5 V
                           R_DS(ON) = 35 m@ VGS = 2.5 V 
                           R_DS(ON) = 53 m@ VGS = 1.8 V
Fast switching speed
High performance trench technology for extremely low R_DS(ON)


Application

Battery management 
Load switch
Battery protection


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	12	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current  Continuous  (Note 1a)                         Pulsed	-6	A
		-20
PD	Maximum Power Dissipation   (Note 1a)                                                (Note 1b)	1.6	W
		0.8
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDC606P P-Channel 1.8V specified MOSFET uses Fairchild's low voltage PowerTrench process. It has been optimized for battery power management applications.  

Parameters:

Technical/Catalog Information	FDC606P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	26 mOhm @ 6A, 4.5V
Input Capacitance (Ciss) @ Vds	1699pF @ 6V
Power - Max	800mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	25nC @ 4.5V
Package / Case	SSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC606P FDC606P FDC606PCT ND FDC606PCTND FDC606PCT